A Design Methodology for a Point of Load Converter for a Distributed Power Architecture using a Normally Off Silicon Carbide Vertical Junction Field Effect Transistor as the Enabling Technology

Author

Robin Lynn Kelley

Issuing Body

Mississippi State University

Advisor

Mazzola, Michael S.

Committee Member

Molen, G. Marshall

Committee Member

Abdelwahed, Sherif

Date of Degree

5-12-2012

Document Type

Graduate Thesis - Open Access

Major

Electrical Engineering

Degree Name

Master of Science

College

James Worth Bagley College of Engineering

Department

Department of Electrical and Computer Engineering

Abstract

A point-of-load converter was designed for a distributed power architecture using a normally off silicon carbide (SiC) junction field effect transistor (JFET) as the enabling technology. The power supply accepts a 208-V single phase input and generates a +26 V and +10 V output for pulsed loads as well as a +5 V and -5 V auxiliary supplies for digital/control circuitry. This work focuses on the integration of the first normally off SiC JFET to allow for an efficient (≥ 93%), high power density (≥ 100 W/in3) power converter demonstrating higher switching frequency. A switching frequency of 500 kHz was achieved which more than doubles the operating frequency of a reference design with silicon MOSFETs. The power supply design described in this thesis integrates a power factor correction pre-regulator with multiple output Weinberg and flyback converters each utilizing normally off SiC JFETs. Experimental results are presented to validate the design.

URI

https://hdl.handle.net/11668/19294

Recommended Citation

Kelley, Robin Lynn, "A Design Methodology for a Point of Load Converter for a Distributed Power Architecture using a Normally Off Silicon Carbide Vertical Junction Field Effect Transistor as the Enabling Technology" (2012). Theses and Dissertations. 112.
https://scholarsjunction.msstate.edu/td/112