Advisor

Mazzola, Michael

Committee Member

Molen, G. Marshall

Committee Member

Koshka, Yaroslav

Committee Member

Fu, Yong

Date of Degree

1-1-2013

Document Type

Dissertation - Open Access

Major

Electrical Engineering

Degree Name

Doctor of Philosophy

College

James Worth Bagley College of Engineering

Department

Department of Electrical and Computer Engineering

Abstract

The commercialization of wide band-gap devices such as silicon carbide and gallium nitride transistors has made it possible for power electronics applications to achieve unprecedented performance in terms of efficiency and power density. However, the device characteristics which make this performance possible also create secondary consequences in these high-performance applications. One such consequence which is particularly difficult to manage in the context of power electronics applications is the occurrence of self-sustained oscillation. This problem has been recognized in the power electronics literature, but heretofore has not received an extensive analytical treatment. This dissertation provides a comprehensive analytical treatment of the self-sustained oscillation phenomenon, logically separated into two components: an initial forced cycle and the subsequent oscillatory behavior. A large-signal model has been developed in order to predict the occurrence of the initial forced cycle based on a set of estimated initial conditions derived from a user-specified operating point. The establishment of the initial forced cycle as predicted by the large-signal model creates the bias conditions necessary for the analytical treatment of the subsequent oscillatory behavior. For this purpose, a small-signal model is presented which describes this phenomenon on the basis of recognizing the wide band-gap device and a minimal set of parasitic components associated with the gate and drain circuits as an unintended negative conductance oscillator. In the context of established oscillator design theory it has been shown both analytically and with simulation that negative differential conductance exhibited by the parasitic model explains the conditions under which self-sustained oscillation is likely to occur. Both the large-signal and small-signal models are shown to demonstrate good agreement with empirical results from pulsed switching experiments obtained over a wide range of operating conditions. In addition, a catalog of known solutions to the problem of self-sustained oscillation is presented, along with a discussion of a method by which the current work can be used by application designers to preclude the occurrence of this phenomenon in practical systems by design.

URI

https://hdl.handle.net/11668/20153

Comments

resonance||stability||oscillation||transistors||Wide band-gap

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