Theses and Dissertations
Issuing Body
Mississippi State University
Advisor
Koshka, Yaraslov
Committee Member
Winton, S. Raymond
Committee Member
Kim, Seong-Gon
Date of Degree
12-13-2008
Document Type
Graduate Thesis - Open Access
Major
Electrical Engineering
Degree Name
Master of Science
College
College of Engineering
Department
Department of Electrical and Computer Engineering
Abstract
With the low-temperature halo-carbon epitaxial growth technique developed at MSU prior to this work, use of a halo-carbon growth precursor enabled low-temperature homoepitaxial process for 4H-SiC at temperatures below 1300 °C with good quality. Investigations of the nitrogen doping dependence are reported. It has been demonstrated that the efficiency of the nitrogen incorporation may be different for different substrate orientations, with the Cace showing the higher value of doping. The Si/C ratio is known to influence the doping during the epitaxial growth due to the site-competition mechanism. The doping on the Cace showed weak dependence on the Si/C ratio. On the Siace, the doping dependence follows the site-competition trend. At high Si/C ratio, the doping trend on Siace shows strong deviation. Both of the investigated trends are suggested for use as the main process dependencies for achieving a wide range of n type doping of SiC during the low-temperature halo-carbon homoepitaxial process.
URI
https://hdl.handle.net/11668/15491
Recommended Citation
Chindanon, Kritsa, "Nitrogen doping in low temperature halo-carbon homoepitaxial growth of 4H-silicon carbide" (2008). Theses and Dissertations. 3291.
https://scholarsjunction.msstate.edu/td/3291
Comments
nitrogen||silicon carbide||halo-carbon||epitaxial growth||Chemical Vapor Deposition