Theses and Dissertations

Issuing Body

Mississippi State University

Advisor

Koshka, Yaroslav

Committee Member

Casady, Jeff

Committee Member

Mazzola, Mike

Committee Member

Winton, Raymond

Date of Degree

8-2-2003

Original embargo terms

MSU Only Indefinitely

Document Type

Graduate Thesis - Campus Access Only

Major

Electrical Engineering

Degree Name

Master of Science

College

James Worth Bagley College of Engineering

Department

Department of Electrical and Computer Engineering

Abstract

This work demonstrates design of analog circuit blocks using radiation-hardened and temperature tolerant silicon carbide enhancement and depletion JFET. Most of the work to date in silicon carbide is focused on CMOS like circuits, which are less temperature tolerant, compared to JFETs. In this work, efforts have been made to accurately model silicon carbide depletion and enhancement mode n-JFETs. I-V characteristics of the models were simulated for different values of channel thickness and doping concentration. Analog circuit building blocks such as current mirrors and sources are presented for both enhancement mode and depletion mode JFETs at different temperatures. A source coupled differential amplifier was designed using depletion mode silicon carbide n-JFETs. Various differential amplifier specifications such as Voltage swing, input common mode range (ICMR), differential gain, common mode gain and Common mode rejection ratio (CMRR) are simulated at room temperature and at 673K.

URI

https://hdl.handle.net/11668/19818

Comments

MOS||JFET||silicon carbide

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