Theses and Dissertations

Issuing Body

Mississippi State University

Advisor

Seungdeog Choi

Committee Member

Masoud Karimi-Ghartemani Yong Fu

Committee Member

Chanyeop Park

Date of Degree

8-6-2021

Original embargo terms

Worldwide

Document Type

Dissertation - Open Access

Major

Electrical Engineering

Degree Name

Doctor of Philosophy

College

James Worth Bagley College of Engineering

Department

Department of Electrical and Computer Engineering

Abstract

The power electronics market is valued at $23.25 billion in 2019 and is projected to reach $ 36.64 billion by 2027. Power electronic systems (PES) have been extensively used in a wide range of critical applications, including automotive, renewable energy, industrial variable-frequency drive, etc. Thus, the PESs' reliability and robustness are immensely important for the smooth operation of mission-critical applications. Power semiconductor switches are one of the most vulnerable components in the PES. The vulnerability of these switches impacts the reliability and robustness of the PES. Thus, switch-health monitoring and prognosis are critical for avoiding unexpected shutdowns and preventing catastrophic failures. The importance of the prognosis study increases dramatically with the growing popularity of the next-generation power semiconductor switches, wide bandgap switches. These switches show immense promise in the high-power high-frequency operations due to their higher breakdown voltage and lower switch loss. But their wide adaptation is limited by the inadequate reliability study. A thorough prognosis study comprising switch degradation modeling, remaining useful life (RUL) estimation, and degradation-aware controller development, is important to enhance the PESs' robustness, especially with wide bandgap switches. In this dissertation, three studies are conducted to achieve these objectives- 1) Insulated Gate Bipolar Transistor (IGBT) degradation modeling and RUL estimation, 2) cascode Gallium Nitride (GaN) Field-Effect Transistor (FET) degradation modeling and RUL estimation, and 3) Degradation-aware controller design for a PES, solid-state transformer (SST). The first two studies have addressed the significant variation in RUL estimation and proposed degradation identification methods for IGBT and cascode GaN FET. In the third study, a system-level integration of the switch degradation model is implemented in the SST. The insight into the switch's degradation pattern from the first two studies is integrated into developing a degradation-aware controller for the SST. State-of-the-art controllers do not consider the switch degradation that results in premature system failure. The proposed low-complexity degradation-aware and adaptive SST controller ensures optimal degradation-aware power transfer and robust operation over the lifetime.

Download

Share

COinS