Mississippi State University
Masoud Karimi-Ghartemani Yong Fu
Date of Degree
Original embargo terms
Dissertation - Open Access
Doctor of Philosophy
James Worth Bagley College of Engineering
Department of Electrical and Computer Engineering
The power electronics market is valued at $23.25 billion in 2019 and is projected to reach $ 36.64 billion by 2027. Power electronic systems (PES) have been extensively used in a wide range of critical applications, including automotive, renewable energy, industrial variable-frequency drive, etc. Thus, the PESs' reliability and robustness are immensely important for the smooth operation of mission-critical applications. Power semiconductor switches are one of the most vulnerable components in the PES. The vulnerability of these switches impacts the reliability and robustness of the PES. Thus, switch-health monitoring and prognosis are critical for avoiding unexpected shutdowns and preventing catastrophic failures. The importance of the prognosis study increases dramatically with the growing popularity of the next-generation power semiconductor switches, wide bandgap switches. These switches show immense promise in the high-power high-frequency operations due to their higher breakdown voltage and lower switch loss. But their wide adaptation is limited by the inadequate reliability study. A thorough prognosis study comprising switch degradation modeling, remaining useful life (RUL) estimation, and degradation-aware controller development, is important to enhance the PESs' robustness, especially with wide bandgap switches. In this dissertation, three studies are conducted to achieve these objectives- 1) Insulated Gate Bipolar Transistor (IGBT) degradation modeling and RUL estimation, 2) cascode Gallium Nitride (GaN) Field-Effect Transistor (FET) degradation modeling and RUL estimation, and 3) Degradation-aware controller design for a PES, solid-state transformer (SST). The first two studies have addressed the significant variation in RUL estimation and proposed degradation identification methods for IGBT and cascode GaN FET. In the third study, a system-level integration of the switch degradation model is implemented in the SST. The insight into the switch's degradation pattern from the first two studies is integrated into developing a degradation-aware controller for the SST. State-of-the-art controllers do not consider the switch degradation that results in premature system failure. The proposed low-complexity degradation-aware and adaptive SST controller ensures optimal degradation-aware power transfer and robust operation over the lifetime.
Haque, Moinul Shahidul, "Degradation modeling and degradation-aware control of power electronic systems" (2021). Theses and Dissertations. 5253.