Theses and Dissertations
Issuing Body
Mississippi State University
Advisor
Blalock, Benjamin J.
Committee Member
Casady, Jeffrey B.
Committee Member
Winton, Raymond S.
Committee Member
Reese, Robert B.
Date of Degree
5-11-2002
Document Type
Graduate Thesis - Open Access
Major
Electrical Engineering
Degree Name
Master of Science
College
College of Engineering
Department
Department of Electrical and Computer Engineering
Abstract
A new multiple-gate transistor, the SOI MOS-JFET, is presented. This device combines the MOS field effect and junction field effect within one transistor body. Measured I-V characteristics are provided to illustrate typical modes of operation and the functionality associated with each gate. Two-dimensional simulations of the device?s cross-section will be presented to illustrate various conduction modes under different bias conditions. Test results indicate the MOS-JFET is well suited for both high-voltage and low-voltage circuit demands for systems-on-a-chip applications on SOI technology. Analog building-block circuits based the MOS-JFET are also presented.
URI
https://hdl.handle.net/11668/17998
Recommended Citation
Dufrene, Brian Michael, "The Multiple Gate Mos-Jfet" (2002). Theses and Dissertations. 4571.
https://scholarsjunction.msstate.edu/td/4571
